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W988D6FBGXThis is a 256Mb Low Power SDR SDRAM organized as 4M words x 4 banks x 16bits產(chǎn)品特點Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[詳細(xì)]
W988D2FBJXThis is a 256Mb Low Power SDR SDRAM organized as 2M words x 4 banks x 32bits產(chǎn)品特點Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[詳細(xì)]
W988D6FBGAThis is a 256Mb Low Power SDR SDRAM organized as 4M words x 4 banks x 16bits產(chǎn)品特點Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[詳細(xì)]
W988D2FBJAThis is a 256Mb Low Power SDR SDRAM organized as 2M words x 4 banks x 32bits產(chǎn)品特點Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[詳細(xì)]
W989D6KBGXThis is a 512Mb Low Power SDR SDRAM organized as 8M words x 4 banks x 16bits產(chǎn)品特點Note: K-Die keeps supporting but D-Die is suggested for the new designPower supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 133MHz, [詳細(xì)]
W989D2KBJXThis is a 512Mb Low Power SDR SDRAM organized as 4M words x 4 banks x 32bits產(chǎn)品特點Note: K-Die keeps supporting but D-Die is suggested for the new designPower supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 133MHz, [詳細(xì)]
W989D6KBGAThis is a 512Mb Low Power SDR SDRAM organized as 8M words x 4 banks x 16bits產(chǎn)品特點Note: K-Die keeps supporting but D-Die is suggested for the new designPower supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 133MHz, [詳細(xì)]
W989D2DBJAThis is a 512Mb Low Power SDR SDRAM organized as 4M words x 4 banks x 32bits產(chǎn)品特點Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[詳細(xì)]
W989D2DBJXThis is a 512Mb Low Power SDR SDRAM organized as 4M words x 4 banks x 32bits產(chǎn)品特點Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[詳細(xì)]
W989D6DBGAThis is a 512Mb Low Power SDR SDRAM organized as 8M words x 4 banks x 16bits產(chǎn)品特點Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[詳細(xì)]
W989D6DBGXThis is a 512Mb Low Power SDR SDRAM organized as 8M words x 4 banks x 16bits產(chǎn)品特點Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Pr[詳細(xì)]
W989D2KBJAThis is a 512Mb Low Power SDR SDRAM organized as 4M words x 4 banks x 32bits產(chǎn)品特點Note: K-Die keeps supporting but D-Die is suggested for the new designPower supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 133MHz, [詳細(xì)]
W956K6HBCThe is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.產(chǎn)品特點Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VC[詳細(xì)]
W966K6HBGfacebooktwitterlinkedingoogleplusThe is a 32M bit CellularRAM™ compliant products, organized as 2M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.產(chǎn)品特點Supports asynchronous, page, and burst operation[詳細(xì)]
W956D6HBCfacebooktwitterlinkedingoogleplusThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.產(chǎn)品特點Supports asynchronous and burst operations VCC, [詳細(xì)]
W966D6HBGfacebooktwitterlinkedingoogleplusThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.產(chǎn)品特點Supports asynchronous, page, and burst operation[詳細(xì)]
W957D6HBCfacebooktwitterlinkedingoogleplusThis a 128M bit CellularRAM™ compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.產(chǎn)品特點16-bit address/ data bus width, Address-High, Add[詳細(xì)]
This a 128M bit CellularRAM compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.產(chǎn)品特點Supports asynchronous, page, and burst operations VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1[詳細(xì)]
W958D6DBCfacebooktwitterlinkedingoogleplusThis is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.產(chǎn)品特點Supports asynchronous and burst operations&nb[詳細(xì)]
W968D6DAGThis is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.產(chǎn)品特點Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V[詳細(xì)]
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