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This is a 256Mb Low Power DDR2 SDRAM organized as 8M words x 4 banks x 16bits產品特點Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz Standard Self Refresh Mode PASR、ATCSR、[詳細]
This is a 256Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bits產品特點Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz Standard Self Refresh Mode PASR、ATCSR、[詳細]
This is a 256Mb Low Power DDR2 SDRAM organized as 8M words x 4 banks x 16bitsPlease contact sales for automotive datasheet.產品特點Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x16 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[詳細]
This is a 256Mb Low Power DDR2 SDRAM organized as 4M words x 4 banks x 32bitsPlease contact sales for automotive datasheet.產品特點Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30V Data width: x32 Burst Type: Sequential or Interleave、Clock rate : 400MHz, 533MHz&nbs[詳細]
This is a 2Gb Low Power DDR3 SDRAM organized as 16M words x 4 banks x 32bits產品特點Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30VData width: x32Burst Type: Sequential or Interleave、Clock rate : 933MHzStandard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD [詳細]
This is a 2Gb Low Power DDR3 SDRAM organized as 32M words x 4 banks x 16bits產品特點Power supply VDD1 = 1.7V~1.95V、VDD2/VDDCA/VDDQ = 1.14V~1.30VData width: x16 Burst Type: Sequential or Interleave、Clock rate : 933MHzStandard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD[詳細]
64M-bit 1.8V的串行閃存，具有相同的4KB扇區和雙/Quad SPI和QPI。產品特點Single/Dual/Quad SPI and QPI operation Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 32,768 pages (256 bytes), page program in 0.7mS (typ.) Continuous Read with 8/16/32/64 Byte Wrap Quad Peripheral Interf[詳細]
產品特點：128M-bit 1.8V序列閃存，具有統一的4KB扇區和雙/Quad SPI和QPI。Single/Dual/Quad SPI and QPI operation Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 65,536 pages (256 bytes), page program in 0.7mS (typ.) Continuous Read with 8/16/32/64 BByte Wrap Quad Peripheral inte[詳細]
華邦電(2344)2018年2月含新唐科技等子公司，單月合并營收為38.29億元，較1月減少7.64%，較去年同期增加14.26%。2018年1至2月合并營收為79.75億元，較去年同期增加17.74%。華邦電子總經理詹東義于上季法說會表示，目前公司DRAM、FLASH兩大記憶體占營收比重約各半，成為兩個成長引擎。對今年DRAM、FLASH市場看法仍[詳細]
華邦的w25x和w25q spiflash®多I/O的記憶特征的流行的串行外設接口（SPI），從512K位512M的點密度，小的可擦除扇區和業界最高性能。的w25x家庭支持雙SPI標準SPI時鐘速率翻倍。w25q的家庭是一個“超集”在25X家族dual-i / O和quad-i / O SPI更高的性能。時鐘速率高達104mhz實現416mhz等效（50M字節/秒的傳輸速[詳細]
W25Q16JVSSIQ是華邦flash芯片代理-深圳穎特新提供的一款供不應求的串口式NOR型存儲器。Wibond華邦電子經過不斷的技術創新與市場的洗禮，推出當前串口型NOR型閃存的最新型號W25Q16JVSSIQ。穎特新科技主要代理Winbond華邦NOR型閃存，備有大量現貨，保證每一顆都出自Winbond華邦原廠。支持樣品，批量。W25Q16JVSSI[詳細]
Density 2Mbit Voltage 2.3 - 3.6V Speed 104MHZ Package 150mil SOIC\VSOP Package WSON 5x6mm Package USON 2x3mm產品特點Single and Dual Serial Peripheral Interface Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 1024 pages (256 bytes), page program in 0.4mS (typ.) [詳細]
1M-bit 1.8V Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI產品特點Dual/Quad Serial Peripheral Interface Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 512 pages (256 bytes), page program in 0.4mS (typ.) Single/Dual/Quad Fast Read instructions&[詳細]
Density 1Mbit Voltage 2.3 - 3.6V Speed 104MHZ Package SOIC8 150mil Package USON8 2x3mm產品特點N/APackageSOIC8150mil,USON8 2X3mm,[詳細]
Density 512kbit Voltage 2.3 - 3.6V Speed 104MHZ Package 150mil SOIC\VSOP Package 173mil TSSOP Package WSON 5x6mm Package USON 2x3mm產品特點N/APackageSOIC8 150mil,TSSOP8 173mil, USON 2x3mm,[詳細]
W25Q256JW256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI產品特點Single/Dual/Quad SPI operations 3 or 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 131,072 pages (256 bytes), page program in 0.7mS (typ.) Co[詳細]
W25Q256JW-DTRfacebooktwitterlinkedingoogleplus256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI and QPI產品特點Single/Dual/Quad SPI, QPI and Dual Transfer Rate (DTR) operations 3 or 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasa[詳細]
W25Q256JV-DTR256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI and QPI產品特點Single/Dual/Quad SPI, QPI and Dual Transfer Rate (DTR) operations 3 or 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 131,072 pages (25[詳細]
W25Q257JV256M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI產品特點Single/Dual/Quad SPI, and QPI operations 4-Byte Addressing Modes Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 131,072 pages (256 bytes), page program in 0.7mS (typ.)&nbs[詳細]
W956D6KBKThe is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.產品特點Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VC[詳細]
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